Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET

	Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET
	Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li
刊名	IEEE Electron Device Letters
	2019
卷号	40 期号:5 页码:698-701
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/29510]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li. Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET[J]. IEEE Electron Device Letters,2019,40(5):698-701.
APA	Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li.(2019).Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET.IEEE Electron Device Letters,40(5),698-701.
MLA	Weijiang Ni ; Xiaoliang Wang ; Miaolin Xu; Quan Wang ; Chun Feng; Honglin Xiao; Lijuan Jiang; Wei Li."Study of Asymmetric Cell Structure Tilt Implanted 4H-SiC Trench MOSFET".IEEE Electron Device Letters 40.5(2019):698-701.