Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors

doi:10.1039/c9ra01052a

	Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors
	Lv, Zhengxia; Liu, Dan; Yu, Xiaoqin; Lv, Qianjin; Gao, Bing; Jin, Hehua; Qiu, Song; Men, Chuanling; Song, Qijun; Li, Qingwen
刊名	RSC ADVANCES
	2019
卷号	9 期号:19 页码:10578
ISSN号	2046-2069
DOI	10.1039/c9ra01052a
文献子类	Article
英文摘要	Semiconducting single-walled carbon nanotubes (s-SWNTs) show great promises in advanced electronics. However, contact resistance between the nanotubes and metal electrode has long been a bottleneck to the development of s-SWNTs in high-performance electronic devices. Here we demonstrate a simple and controllable strategy for enhancing the electrode contact and therefore the performance of s-SWNT thin film transistors by plasma etching treatment, which effectively removes the polymer residues, including the photoresist and the conjugated molecules, adsorbed on the surface of s-SWNTs. As a result, the contact resistance is reduced by 3 times and the carrier mobility rises by up to 70%. Our method is compatible with current silicon semiconductor processing technology, making it a viable effective approach to large-scale application of s-SWNTs in the electronics industry.
WOS研究方向	Chemistry
语种	英语
出版者	ROYAL SOC CHEMISTRY
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27416]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Lv, Zhengxia,Liu, Dan,Yu, Xiaoqin,et al. Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors[J]. RSC ADVANCES,2019,9(19):10578.
APA	Lv, Zhengxia.,Liu, Dan.,Yu, Xiaoqin.,Lv, Qianjin.,Gao, Bing.,...&Li, Qingwen.(2019).Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors.RSC ADVANCES,9(19),10578.
MLA	Lv, Zhengxia,et al."Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors".RSC ADVANCES 9.19(2019):10578.