Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction

doi:10.1021/acsami.9b02124

	Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction
	Shen, Jiajun; Wang, Zhenyi; Chu, Jing; Bai, Shengqiang; Zhao, Xinbing; Chen, Lidong; Zhu, Tiejun
刊名	ACS APPLIED MATERIALS & INTERFACES
	2019-04-17
卷号	11 期号:15 页码:14182
关键词	thermoelectric materials half-Heusler compounds electrode contact resistivity interfacial microstructure Ohmic contact
ISSN号	1944-8244
DOI	10.1021/acsami.9b02124
文献子类	Article
英文摘要	Half-Heusler compounds are a class of promising thermoelectric (TE) materials for power generation. However, the large contact resistivity at the interface between TE legs and metal electrode of the TE device seriously hinders the full play of the material performance. Here we report an Ohmic contact for the junction of p-type Nb0.8Ti0.2FeSb and Mo electrode with a low contact resistivity of <1 mu O cm(2) due to the matching of work functions between Nb0.8Ti0.2FeSb and FeMo interlayer. The interface carrier transport is dominated by the field emission and consequently a strong tunneling electric current is obtained due to the high doping level and relatively low dielectric constant of p-type Nb0.8Ti0.2FeSb semiconductor. The interface microstructure analysis indicates that there is a FeMo alloy interlayer with a thickness of 5 mu m and a mixing layer of Nb0.8Ti0.2FeSb and Nb3Ti with a thickness of 25 mu m. After a long time heat treatment at 1073 K, the FeMo alloy transforms into a FeSb2 layer, while the mixing layer is occupied totally by Nb3Ti. Due to the relatively high electrical resistivity for FeSb2 phase, the increasing content of Nb3Ti and the crack at both sides of Nb3Ti interlayer, the contact resistivity rises up to 18.4 mu O cm(2) after 32 days aging. These results demonstrate that the applicability of low contact resistivity NbFeSb/Mo junction in high performance TE devices.
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/27175]
专题	中国科学院上海硅酸盐研究所
推荐引用方式 GB/T 7714	Shen, Jiajun,Wang, Zhenyi,Chu, Jing,et al. Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction[J]. ACS APPLIED MATERIALS & INTERFACES,2019,11(15):14182.
APA	Shen, Jiajun.,Wang, Zhenyi.,Chu, Jing.,Bai, Shengqiang.,Zhao, Xinbing.,...&Zhu, Tiejun.(2019).Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction.ACS APPLIED MATERIALS & INTERFACES,11(15),14182.
MLA	Shen, Jiajun,et al."Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction".ACS APPLIED MATERIALS & INTERFACES 11.15(2019):14182.