Magneto-transport property of an AlInN/AlN/GaN heterostructure

doi:10.1016/j.physb.2019.03.030

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	Magneto-transport property of an AlInN/AlN/GaN heterostructure
	Xie X. J.; Gao K. H.; Li S.; Zhou D. B.; Zhou W. Z.; Sun Y.; Lin T.
刊名	PHYSICA B-CONDENSED MATTER
	2019
卷号	562 期号:无页码:112-115
关键词	Two-dimensional electron gas Positive magnetoresistance Beating pattern
DOI	10.1016/j.physb.2019.03.030
英文摘要	This paper reports a research of the magneto-transport property of an AlInN/AlN/GaN heterostructure. A large positive magnetoresistance (MR) up to 79% under 9 T is observed, which is indicative of potential sensor application. The observed positive MR is attributed to the presence of the parallel conduction. Meanwhile, the Shubnikov-de Hass (SdH) oscillations of the longitudinal MR appear up at high magnetic field. From the SdH oscillations, beating patterns are observed in the AlInN/AlN/GaN heterostructure. Neither the magneto-inter-subband oscillation nor the zero-field spin splitting can explain the observed beating patterns, which can be attributed to the sample inhomogeneity.
WOS记录号	WOS:000464556200020
内容类型	期刊论文
源URL	[http://202.127.2.71:8080/handle/181331/12382]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Xie X. J.,Gao K. H.,Li S.,et al. Magneto-transport property of an AlInN/AlN/GaN heterostructure[J]. PHYSICA B-CONDENSED MATTER,2019,562(无):112-115.
APA	Xie X. J..,Gao K. H..,Li S..,Zhou D. B..,Zhou W. Z..,...&Lin T..(2019).Magneto-transport property of an AlInN/AlN/GaN heterostructure.PHYSICA B-CONDENSED MATTER,562(无),112-115.
MLA	Xie X. J.,et al."Magneto-transport property of an AlInN/AlN/GaN heterostructure".PHYSICA B-CONDENSED MATTER 562.无(2019):112-115.