Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature

doi:10.1080/02670844.2018.1454997

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature
	Wang, HJ ; Li, QT ; Wu, XJ
刊名	SURFACE ENGINEERING
	2019
卷号	35 期号:1 页码:54—58
关键词	FIELD-EMISSION PROPERTIES ROOM-TEMPERATURE ION-BOMBARDMENT CONE ARRAYS FABRICATION PLASMA FILMS MICROTIPS PILLARS MASKS
ISSN号	0267-0844
DOI	10.1080/02670844.2018.1454997
文献子类	期刊论文
英文摘要	Ultra-high-density silicon nanocone arrays with sharp tips have been fabricated by Ar+ sputtering at low temperatures. The investigation of SEM and AFM indicates that with an increasing substrate temperature from room temperature, 200 to 400 degrees C, the density of silicon nanocone increases from 1-2 x 10(9), 3-4 x 10(9) to 1-2 x 10(10) cm(-2), respectively. The rooter diameter of the cones decreases from 120-150 to 40-50 nm and the tip angle of cones decreases from 32-36 degrees to 20-26 degrees. As predicted by the Bradley-Harper theory, the ripple wavelength decreases with substrate temperature during the carbon ripple formation process, which leads to an increase in the silicon nanocone density and a decrease in the silicon nanocone rooter diameter.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/31892]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Nanjing Inst Ind Technol, Sch Mech Engn, Nanjing 210023, Jiangsu, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai, Peoples R China
推荐引用方式 GB/T 7714	Wang, HJ,Li, QT,Wu, XJ. Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature[J]. SURFACE ENGINEERING,2019,35(1):54—58.
APA	Wang, HJ,Li, QT,&Wu, XJ.(2019).Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature.SURFACE ENGINEERING,35(1),54—58.
MLA	Wang, HJ,et al."Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature".SURFACE ENGINEERING 35.1(2019):54—58.