Electronic structure evolutions driven by oxygen vacancy in SrCoO3-x films

doi:10.1007/s40843-019-9410-2

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Electronic structure evolutions driven by oxygen vacancy in SrCoO3-x films
	Zhao, JL ; Luo, Y ; Wang, JO ; Qian, HJ ; Liu, C ; He, X ; Zhang, QH ; Huang, HY ; Zhang, BB ; Li, SF
刊名	SCIENCE CHINA-MATERIALS
	2019
卷号	62 期号:8 页码:1162—1168
关键词	PHASE-TRANSFORMATION GROUND-STATE
ISSN号	2095-8226
DOI	10.1007/s40843-019-9410-2
文献子类	期刊论文
英文摘要	Ionic defects, such as oxygen vacancies, play a crucial role in the magnetic and electronic states of transition metal oxides. Control of oxygen vacancy is beneficial to the technological applications, such as catalysis and energy conversion. Here, we investigate the electronic structure of SrCoO3-x, as a function of oxygen content (x). We found that the hybridization extent between Co 3d and O 2p increased with the reduction of oxygen vacancies. The valence band maximum of SrCoO2.5+delta has a typical O 2p characteristic. With further increasing oxygen content, the Co ions transform from a high spin Co3+ to an intermediate spin Co4+, resulting in a transition of SrCoO3-x, from insulator to metal. Our results on the electronic structure evolution with the oxygen vacancies in SrCoO3-x, not only illustrate a spin state transition of Co ions, but also indicate a perspective application in catalysis and energy field.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/31592]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China; 2.Univ Liege, Phys Theor Mat, Q Mat, CESAM, B-4000 Liege, Belgium; 3.Zhengzhou Univ, Sch Phys Engn, Zhengzhou 450001, Henan, Peoples R China; 4.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China; 5.Chinese Acad Sci, Shanghai Inst Appl Phys, SSRF, Shanghai 201204, Peoples R China 6.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China;
推荐引用方式 GB/T 7714	Zhao, JL,Luo, Y,Wang, JO,et al. Electronic structure evolutions driven by oxygen vacancy in SrCoO3-x films[J]. SCIENCE CHINA-MATERIALS,2019,62(8):1162—1168.
APA	Zhao, JL.,Luo, Y.,Wang, JO.,Qian, HJ.,Liu, C.,...&Guo, HZ.(2019).Electronic structure evolutions driven by oxygen vacancy in SrCoO3-x films.SCIENCE CHINA-MATERIALS,62(8),1162—1168.
MLA	Zhao, JL,et al."Electronic structure evolutions driven by oxygen vacancy in SrCoO3-x films".SCIENCE CHINA-MATERIALS 62.8(2019):1162—1168.