Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing

doi:10.1109/TED.2019.2901030

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	Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing
	Zhu, Guodong ; Chen, Wenchao ; Wang, Dawei ; Xie, Hao ; Zhao, Zhenguo ; Gao, Pingqi ; Schutt-Aine, Jose ; Yin, Wen-Yan
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2019
卷号	66 期号:4 页码:1747-1753
关键词	DEVICE SIMULATION
DOI	10.1109/TED.2019.2901030
英文摘要	Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/18424]
专题	2019专题
作者单位	1.Chen, WC 2.Chen, WC (reprint author), ZJU UIUC Inst, Coll Informat Sci & Elect Engn, Int Campus, Haining 314400, Peoples R China. 3.Yin, WY (reprint author), Zhejiang Univ, Key Lab Adv Micronano Elect Devices & Smart Syst, Innovat Inst Electromagnet Informat & Elect Integ, Coll Informat Sci & Elect Engn, Hangzhou 310058, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Zhu, Guodong,Chen, Wenchao,Wang, Dawei,et al. Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66(4):1747-1753.
APA	Zhu, Guodong.,Chen, Wenchao.,Wang, Dawei.,Xie, Hao.,Zhao, Zhenguo.,...&Yin, Wen-Yan.(2019).Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing.IEEE TRANSACTIONS ON ELECTRON DEVICES,66(4),1747-1753.
MLA	Zhu, Guodong,et al."Study on High-Density Integration Resistive Random Access Memory Array From Multiphysics Perspective by Parallel Computing".IEEE TRANSACTIONS ON ELECTRON DEVICES 66.4(2019):1747-1753.