An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells

doi:10.1016/j.solmat.2019.109926

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2019专题

	An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells
	Gao, Tian ; Yang, Qing ; Guo, Xueqi ; Huang, Yuqing ; Zhang, Zhi ; Wang, Zhixue ; Liao, Mingdun ; Shou, Chunhui ; Zeng, Yuheng ; Yan, Baojie
刊名	SOLAR ENERGY MATERIALS AND SOLAR CELLS
	2019
卷号	200
关键词	PASSIVATING CONTACT FILM SI EFFICIENCY RECOMBINATION SIMULATION RESISTANCE OXIDATION JUNCTIONS LIFETIME EMITTER
DOI	10.1016/j.solmat.2019.109926
英文摘要	An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17974]
专题	2019专题
作者单位	1.Ye, JC (reprint author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 2.Zhao, Y (reprint author), Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China. 3.Zeng, YH
推荐引用方式 GB/T 7714	Gao, Tian,Yang, Qing,Guo, Xueqi,et al. An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2019,200.
APA	Gao, Tian.,Yang, Qing.,Guo, Xueqi.,Huang, Yuqing.,Zhang, Zhi.,...&Ye, Jichun.(2019).An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,200.
MLA	Gao, Tian,et al."An industrially viable TOPCon structure with both ultra-thin SiOx and n(+) - poly-Si processed by PECVD for p-type c-Si solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 200(2019).