The threshold voltage degradation of MOSFET in heavy-ion single event effect test

doi:10.1109/ICREED.2018.8905067

	The threshold voltage degradation of MOSFET in heavy-ion single event effect test
	Zhang, Zeming 2; Ma, Yingqi 1; Li, Dan 2; Tong, Chao 2; Guo, Xiaoxiao 2; Han, Jianwei 1; Dang, Wei 2
	2019
会议日期	May 16, 2018 - May 18, 2018
会议地点	Beijing, China
DOI	10.1109/ICREED.2018.8905067
英文摘要	A degradation is studied that the gate-source threshold voltage of BSS138BK N-channel MOSFET decreased dramatically in heavy-ion single event effect test. The comparative study is performed by laser test, total ionizing dose test and no-irradiation room temperature test. This case study illustrate the parameter degradation process, comparative test results and the analysis. © 2018 IEEE.
会议录	2018 International Conference on Radiation Effects of Electronic Devices, ICREED 2018
语种	英语
ISBN号	9781538641354
内容类型	会议论文
源URL	[http://ir.nssc.ac.cn/handle/122/7272]
专题	国家空间科学中心_空间技术部
作者单位	1.National Space Science Center, Chinese Academy of Sciences, Beijing; 100190, China 2.Technology and Engineering Centre for Space Utilization, Chinese Academy of Sciences, No.9 Dengzhuang, South Road, Beijing; 100094, China;
推荐引用方式 GB/T 7714	Zhang, Zeming,Ma, Yingqi,Li, Dan,et al. The threshold voltage degradation of MOSFET in heavy-ion single event effect test[C]. 见:. Beijing, China. May 16, 2018 - May 18, 2018.