Sputtering induced by Arq+ impact on Nb surface

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	Sputtering induced by Arq+ impact on Nb surface
	Wang Tie-Shan 1; Chen Liang1 ; Peng Hai-Bo 1; Cheng Rui1 ; Xiang Yang 1; Wang Yu-Yu2 ; Xiao Guo-Qing2
刊名	CHINESE PHYSICS LETTERS
	2008-10-01
卷号	25 期号:10 页码:3643-3645
ISSN号	0256-307X
英文摘要	The relative sputtering yield induced by highly charged Arq+ impacting on Nb surface is investigated. The yield increases drastically as the incidence angle increases. A formula Y=A* tan(B) (theta) + C, developed from classical sputtering theory, fits well with the yield. By analysing a series of coefficients A and C extracted by curve fitting, the results demonstrate the presence of a synergy of the linear cascade collision and potential energy deposition.
资助项目	National Natural Science Foundation of China[10475035]
WOS关键词	HIGHLY-CHARGED IONS ; SLOW MULTICHARGED IONS ; SILICON
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000259736600033
资助机构	National Natural Science Foundation of China
公开日期	2010-10-29
内容类型	期刊论文
源URL	[http://ir.imp.cas.cn/handle/113462/5587]
专题	近代物理研究所_近代物理研究所知识存储（2010之前）
通讯作者	Wang Tie-Shan
作者单位	1.Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Wang Tie-Shan,Chen Liang,Peng Hai-Bo,et al. Sputtering induced by Arq+ impact on Nb surface[J]. CHINESE PHYSICS LETTERS,2008,25(10):3643-3645.
APA	Wang Tie-Shan.,Chen Liang.,Peng Hai-Bo.,Cheng Rui.,Xiang Yang.,...&Xiao Guo-Qing.(2008).Sputtering induced by Arq+ impact on Nb surface.CHINESE PHYSICS LETTERS,25(10),3643-3645.
MLA	Wang Tie-Shan,et al."Sputtering induced by Arq+ impact on Nb surface".CHINESE PHYSICS LETTERS 25.10(2008):3643-3645.