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	Semiconductor laser device
	HIROSE MASANORI; YOSHIKAWA AKIO; SUGINO TAKASHI; YAMAMOTO ATSUYA; NAKAMURA AKIRA; KUME MASAHIRO
	1989-08-14
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1989201980A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To realize a single horizontal mode oscillation at a low threshold current and low operation current and to enhance reliability by providing a double hetero construction with a stripe-shaped projecting part on a conductive substrate and by providing a construction where polyimide is embedded at a part other than the stripe-shape projecting part through an insulation film and metal electrode is mounted on it. CONSTITUTION:When a semiconductor laser is biased in forward direction, current is injected into an active layer directly below the projecting part, stripe- shape projecting part becomes diffraction rate waveguide channel, and laser oscillates within this stripe width. The injected current is held with ridge and is injected into the active layer 3 efficiently so that basic horizontal mode oscillation can be obtained at a low threshold current and low-operation current and at the same time projection can be made simply without performing diffusion, etc., of impurities with one-time crystal growth.
公开日期	1989-08-14
申请日期	1988-02-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83114]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	HIROSE MASANORI,YOSHIKAWA AKIO,SUGINO TAKASHI,et al. Semiconductor laser device. JP1989201980A. 1989-08-14.

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