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	Semiconductor laser
	KITAMURA MITSUHIRO
	1983-08-05
著作权人	NIPPON ELECTRIC CO
专利号	JP1983131786A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain the semiconductor laser, a lateral oscillating mode thereof is stabilized, with excellent reproducibility and with high yield through an epitaxial growth process at a time by previously forming a narrow mesa stripe held between two parallel grooves to a substrate and laminating a semiconductor layer, an energy gap thereof is smaller than an active layer, with the exception of the upper surface of the mesa stripe. CONSTITUTION:The two parallel grooves 102, 103 with approximately 10mum width and 2mum depth in parallel in the direction and the mesa stripe 104 with 2mum width held by the grooves are formed to the (100)n-InP substrate 101 through an etching method. A p-In0.72Ga0.28As0.61P0.39 layer 105 corresponding to 3mum luminous wavelength is laminated onto the whole surface with the exception only of the upper surface of the mesa stripe 104 and an n-InP clad layer 106, the nondoped In0.72Ga0.28As0.61P0.39 active layer 107, a p-InP clad layer 108 and a p-In0.85Ga0.15As0.33P0.67 electrode layer 109 corresponding to 1mum luminous wavelength are laminated in succession.
公开日期	1983-08-05
申请日期	1982-01-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83098]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO. Semiconductor laser. JP1983131786A. 1983-08-05.

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