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	Semiconductor laser
	NOGUCHI ETSUO; MATSUOKA TAKASHI
	1987-05-23
著作权人	NIPPON TELEGR & TELEPH CORP
专利号	JP1987112391A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a stable and high output single vertical mode oscillation by a method wherein an active layer has a multilayer well structure and the reflectance of the one end surface vertical to a light emission direction is higher than the reflectance of a cleft surface and the reflectance of the other end surface is lower than that of the cleft surface. CONSTITUTION:A laminated unit 3 composed of alternately laminated 5 layers of GaInAs and 5 layers of InP is provided on an N-type epitaxial layer 7 formed on an Sn doped InP substrate 1 and an N-type GaInGaP waveguide layer 2 is deposited. After a deflection grating 6 with a predetermined pitch is formed by interference exposure and etching, P-type InP 4 and P type GaInAsP 5 are deposited. Then a reverse mesa is formed on the side of a hetero wafer by using an SiO2 mask and buried by the deposition of P-type GaInAsP 11 and N-type GaInAsP 12 which have a wider band gap than the active layer 3. An Au-Zn electrode 13 and an Au-Ge-Ni electrode 14 are applied to the layers 5 and 12 and to the substrate 1 respectively. An SiNi non-reflecting film 8 with a thickness of lambda/4 is formed on one of the cleft surfaces of a device and a high reflectance (90%) film with a thickness of lambda/4 composed of superposed Si3N4 9 and Au 10 is formed on the other cleft surface. With this constitution, only a TE mode is oscillated to obtain a high output and a stable single vertical mode oscillation can be obtained.
公开日期	1987-05-23
申请日期	1985-11-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/82982]
专题	半导体激光器专利数据库
作者单位	NIPPON TELEGR & TELEPH CORP
推荐引用方式 GB/T 7714	NOGUCHI ETSUO,MATSUOKA TAKASHI. Semiconductor laser. JP1987112391A. 1987-05-23.

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