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	Semiconductor laser device
	KUME MASAHIRO; WADA MASARU; ITO KUNIO; HAMADA TAKESHI
	1987-01-20
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1987011288A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain a laser device which has a stable vertical mode by a method wherein a semiconductor laser element is etched and divided into two elements whose respective resonance end surfaces face each other and a column lens which converges the light is buried between the two divided elements and the laser beam converged by the lens is emitted from one end surface of the element. CONSTITUTION:A cladding layer 2, an activation layer 3 and a cladding layer 5 are deposited and laminated on a GaAs substrate 1 and those laminated layers are divided into two by etching and a column lens 13, which reaches the substrate 1, is buried between divided layers and fixed with ultraviolet curing resin 14. One of the divided layers is used as a photodetector 12 and the other is used as a laser element 11 and an electrode 7 is formed on the laser element 11 and an electrode 6 is formed on the back plane of the substrate 1 to complete a semiconductor laser device. Thus, a laser beam emitted from the element 11 is at first converged by the lens 13 and focused on the surface of the detector 12 and then returned on the same path to the opposite direction into the element 11 and emitted as a laser beam 9 from the outside end surface of the element 1
公开日期	1987-01-20
申请日期	1985-07-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81781]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	KUME MASAHIRO,WADA MASARU,ITO KUNIO,et al. Semiconductor laser device. JP1987011288A. 1987-01-20.

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