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	Distributed feedback type semiconductor laser
	TAKAMORI AKIRA; TAKENAKA NAOKI
	1990-01-31
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1990028984A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To improve single axial-mode oscillation probability, to simplify the manufacture of said oscillation probability and to facilitate development to a surface emission type DFB (a distributed feedback type semiconductor) laser by forming one part of periodical irregular structure along the progressive direction of light in the irregular structure of a double period. CONSTITUTION:A primary diffraction grating 4 is shaped onto an InP substrate 1 having the crystal orientation of (100), a resist for protection is formed only to the section of the primary diffraction grating 4, and a secondary diffraction grating 5 having a double period is shaped continuously to a residual section through the same method. An N-InxGa1-xAsyP1-y optical guide layer 6, an undoped InxGa1-xAsyP1-y active layer 7 corresponding to an emission wavelength of 55mum, a P-InP clad layer 8 and a P-InxGa1-xAsyP1-y cap layer 9 are grown successively onto the diffraction gratings 4, 5, a stripe is shaped onto the layer 9 by an SiO2 film 10 for confining currents, and a P-type electrode 11 and an N-type electrode 12 are formed. Since the coupling coefficient of the region I of the grating 4 is made larger than that of the region II of the grating 5, regeneration between two longitudinal modes is removed, gain difference is generated, and single mode oscillation probability is improved, thus acquiring a DFB laser having a high sub-mode suppression ratio.
公开日期	1990-01-31
申请日期	1988-07-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81206]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	TAKAMORI AKIRA,TAKENAKA NAOKI. Distributed feedback type semiconductor laser. JP1990028984A. 1990-01-31.

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