QQ客服 官方微博 反馈留言

	-
	ENDO KENJI
	1992-03-31
著作权人	NIPPON ELECTRIC CO
专利号	JP1992019714B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To enhance reliability eliminating the influence of crystal defect in the neighborhood of crystal surface, by providing a compound semiconductor layer constituted of four elements with required thickness between an electrode forming region of the two kinds of electrodes. CONSTITUTION:An N type clad layer 12, P type InGaAsP active layer 13 and P type clad layer 14 are provided on an N type InP1 There are P type or N type InGaAsP barrier layer 20, N type InP electrode forming layer 15, P type impurity diffused region 17, Au-Zn alloy layer 16, P side electrode 18 and N side electrode 19. The migration of crystal defect generated in the neighborhood of the interface between the alloy layer 16 and the electrode forming layer 15 and migrating in the electrode forming layer is prevented by the barrier layer not to reach the active layer. Thus, the reliability is enhanced.
公开日期	1992-03-31
申请日期	1981-04-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/81062]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	ENDO KENJI. -. JP1992019714B2. 1992-03-31.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。