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	Semiconductor laser
	SAKAMOTO MASAMICHI
	1984-04-09
著作权人	SONY KK
专利号	JP1984061981A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To produce the titled laser with less spot strain, easy focusing and optical designing by a method wherein a refractivity guide units are provided on both sides of a light emitting region resultantly to provide a gain guide unit inside. CONSTITUTION:Refractivity guide units 18a, 18b are formed so that they may traverse an active layer 13 at the parts coming into contact with the sides 16a, 16b formed by pelletizing or at the parts coming into contact with the sides 16a, 16b by means of inserting into another active layer 11 or the first clad layer 12 i.e. the ends. On the other hand, a gain guide unit 18c is resultantly formed so that an impurity lead-in layer 17 may not reach the active layers at the central part with inside wall thickness of 15f and the bottom surface of the layer 17 may be contained in the second clad layer 14. The stripe-like region 17 is coated with one electrode by an ohmic connection while the backside of the substrate 11 is coated with the other electrode also by the ohmic connection.
公开日期	1984-04-09
申请日期	1982-09-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80853]
专题	半导体激光器专利数据库
作者单位	SONY KK
推荐引用方式 GB/T 7714	SAKAMOTO MASAMICHI. Semiconductor laser. JP1984061981A. 1984-04-09.

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