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	Semiconductor laser
	SHINOZAKI KEISUKE; FURUKAWA RYOZO; WATANABE AKIRA
	1988-01-18
著作权人	OKI ELECTRIC IND CO LTD
专利号	JP1988010580A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain a high output semiconductor laser having current narrowing effect and high reliability by forming a compound semiconductor substrate, a semiconductor layer of opposite conductivity type to the substrate formed between lower clad layers, and a groove having a depth from the surface of the layer to the substrate. CONSTITUTION:An N-type GaAs layer 33 is, for example, formed as a semiconductor layer of opposite conductivity type to that of a P-type GaAs substrate 31 on the substrate 31, and part of the layer 33 is so removed as to penetrate to the substrate 31 by a groove 35 from the surface of the layer 33 to the substrate 3 A P-type Al0.41Ga0.59As layer 37 is formed as a lower clad layer on the groove 35 and the layer 33. In this case, the layer 37 is formed to become a suitable value of 0.3mum or less of thickness of the part except the V-shaped groove 35 to provide a light enclosing effect in the layer 37. Accordingly, the light from the active layer can be enclosed laterally.
公开日期	1988-01-18
申请日期	1986-07-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80811]
专题	半导体激光器专利数据库
作者单位	OKI ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SHINOZAKI KEISUKE,FURUKAWA RYOZO,WATANABE AKIRA. Semiconductor laser. JP1988010580A. 1988-01-18.

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