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	Semiconductor laser
	UNOSAWA HIROKIYO
	1988-08-17
著作权人	NEC CORP
专利号	JP1988199478A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain semiconductor laser with reliability and stability upgraded and low noise, by composing N-type clad layers of the following units: a first N-type clad layer which is doped with Sn and disposed along an active layer, and a second N-type clad layer which is doped with Te in high concentration and formed so that the first N-type clad layer is interposed between this second clad layer and the active layer. CONSTITUTION:In a semiconductor laser device formed by laminating N-type clad layers, an active layer 4, and a P-type clad layer 3, the N-type clad layers are com posed of the following units: a first N-type clad layer 5' which is doped with Sn and disposed along the active layer 4, and a second N-type clad layer 6' which is doped with Te in high concentration and formed so that said first N-type clad layer 5' is interposed between this second clad layer and the active layer 4. For example, a current narrow layer 2 made of N-type GaAs is formed on a P-type GaAs substrate 1, and a groove 11 and a V-shaped groove 10 are formed there. In succession, a P-type clad layer 3 made of Ga1-XAlXAs, a P-type active layer 4 made of Ga1-YAlYAs, the first N-type clad layer 5' which is made of Ga1-ZAlZAs and doped with Sn, and the second N-type clad layer 6' which is made of Ga1-UAlUAs and doped with Te, and the like are made to grow.
公开日期	1988-08-17
申请日期	1987-02-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/80788]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	UNOSAWA HIROKIYO. Semiconductor laser. JP1988199478A. 1988-08-17.

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