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	Semiconductor light emitting element
	HOSODA MASAHIRO; HAYASHI HIROSHI; YAMAMOTO SABURO; YANO MORICHIKA
	1987-05-08
著作权人	SHARP CORP
专利号	JP1987098689A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting element
英文摘要	PURPOSE:To improve the crystalline property of an excitation part, and increase the reliability of a semiconductor light emitting element, by controlling the generation location of defect in a compound semiconductor layer. CONSTITUTION:On a (100) P-type gallium . arsenic (GaAs) substrate 1, an inverse mesa type protrusion is formed, and then an internal current construction layer 3 of N-type gallium arsenic (GaAs) is formed by liquid phase epitaxial growth. In this process, it is possible to suppress the growth of an internal current constriction layer 3 on the inverse mesa type protrusion 2 by the suitable selection of growth conditions. In the internal current constriction layer 3, a stripe part 4 is formed in parallel to the inverse mesa type protrusion and in the direction of the inverse mesa. The second liquid phase epitaxial growth is performed to form a double hetero-structure. At this time, defects generated in an indium . gallium . arsenic . phosphorus (InGaAsP) active layer 6 concentrate in a defect concentration part 7 corresponding to the upper part of the strip 4. The crystal of the upper part 8 of the inverse mesa type protrusion 2 which acts as an excitation part can be extremely excellent in quality.
公开日期	1987-05-08
申请日期	1985-10-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79566]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	HOSODA MASAHIRO,HAYASHI HIROSHI,YAMAMOTO SABURO,et al. Semiconductor light emitting element. JP1987098689A. 1987-05-08.

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