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	Liquid phase epitaxial growth
	KAWABATA YOSHIO; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; YAMAMOTO KOUSAKU
	1983-12-14
著作权人	FUJITSU KK
专利号	JP1983215036A
国家	日本
文献子类	发明申请
其他题名	Liquid phase epitaxial growth
英文摘要	PURPOSE:To enable to remove easily an unnecessarily remaining solution on a crystal layer by a method wherein a separate penetrating hole is provided at the rear side of a liquid reservoir to accommodate a material for formation of the crystal layer, and an adsorbing material is filled up in the hole thereof. CONSTITUTION:At a slide member 11, the differently penetrating hole 13 is provided at the rear side of the liquid reservoir 12 to accommodate the material to form the crystal layer at the uppermost layer out of the crystal layers to be formed on a substrate 16, and the block 14 for adsorption of the melt consisting of porous PbTe, for example, is set up in the hole thereof. Moreover the material 18, 20, 21 of Pb1-xSnxTe is filled up respectively in the reservoirs 17, 19, 12 of the member 1 The member 11 prepared by this way is transferred in order in the direction shown with an arrow mark B, and epitaxial growth of the crystal layer is attained on the substrate 16. After the desired crystal layer is laminatedly formed by this way, the member 11 is transferred moreover in the direction shown with the arrow mark B to make the solution of unnecessary Pb1-xSnxTe remaining on the crystal layer to be adsorbed to the block 14 accommodated in the hole 13. Accordingly the smooth surface of the epitaxial layer generating no convex type projection can be obtained.
公开日期	1983-12-14
申请日期	1982-06-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/79514]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	KAWABATA YOSHIO,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. Liquid phase epitaxial growth. JP1983215036A. 1983-12-14.

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