| Semiconductor light emitting device | |
| WAKAO KIYOHIDE; SHIMA KATSUTO | |
| 1983-11-19 | |
| 著作权人 | FUJITSU KK |
| 专利号 | JP1983199584A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To stabilize the oscillation in a semiconductor laser which is made of the first clad layers, an active layer and the second clad layer by forming different refractive indices of both clad layers. CONSTITUTION:A semiconductor laser is formed by N type GaAs substrate 11, N type Ga1-yAlyAs clad layer 12, N type Ga1-xAlxAs active layer 13, P type Ga1-zAlzAs clad layer 14, P type GaAs contact layer 15, insulating layer 16, P type side electrode 17 and N type side electrode 18. The refractive indices of the layers 12, 14 are different, and the fundamental mode of light wave is cut off at the positions E, E' where coincides with the refractive index of the one clad layer, and wave is guided only between the positions E and E' of the layer 13. |
| 公开日期 | 1983-11-19 |
| 申请日期 | 1982-05-17 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/79399]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE,SHIMA KATSUTO. Semiconductor light emitting device. JP1983199584A. 1983-11-19. |
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