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	SUGINO TAKASHI; OOTA KAZUNARI; KAZUMURA MASARU; YOSHIKAWA AKIO
	1991-01-08
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1991000766B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain flat crystal layer by making larger the deviation of Miller indices due to rotation around the axis parallel to the ridge line such as the stepped area than that due to rotation around the axis perpendicular to the ridge line on the occasion of forming a crystal layer on a substrate having Miller indices of (100), (111) and (110) and stepped area or groove on the surface. CONSTITUTION:A groove 19 is provided on a GaAs substrate 11 having Miller indices of (100) and an N type Ga0.6Al0.4As clad layer 12, non-doped Ga0.95Al0.05 As active layer 13, P type Ga0.6Al0.4As clad layer 14, N type GaAs layer 15 are stacked for liquid phase epitaxial growth. At this time theta1>theta2 where deviation of Miller indices due to rotation around the axis parallel to the ridge line of groove 19 is considered as theta1 and deviation of Miller indices due to rotation around the perpendicular axis as theta2. Thereafter, a Zn diffusion layer 16 which catches into the layer 14 is formed corresponding to the groove 19 and the electrodes 17 and 18 are deposited on the front and rear surfaces.
公开日期	1991-01-08
申请日期	1982-05-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78740]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	SUGINO TAKASHI,OOTA KAZUNARI,KAZUMURA MASARU,et al. -. JP1991000766B2. 1991-01-08.

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