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	Semiconductor laser element
	YAMASHITA SHIGEO; KAJIMURA TAKASHI; HIRASHIMA KENJI; UEJIMA KENICHI
	1989-06-01
著作权人	株式会社日立製作所
专利号	JP1989140787A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To obtain a semiconductor laser having suitably wrong coherency, narrow horizontal beam spreading angle and low noise by increasing the width of a stripelike protrusion shape wide near a reflecting face of the side for irradiating an optical beam, and smoothing its variation, thereby operating its pulsation. CONSTITUTION:The center of a laser has a width W1 of a photoconductor, this region is formed in a structure for effectively generating a pulsation, the vicinity of at least one reflecting face is widened to W2>W1, and a beam spreading angle is corrected in this region. The transfer from the width W1 to the W2 is smoothly performed. The beam spreading angle can be arbitrarily set by altering the width W2 of an optical guide near the reflecting face, i.e., the width of the stripelike protrusion shape provided at a semiconductor clad layer. Thus, the pulsation effectively occurs, thereby obtaining a semiconductor laser element having suitably wrong coherency, a narrow beam spreading angle adapted to be coupled with an optical system, low threshold current value and low noise in a low yield.
公开日期	1989-06-01
申请日期	1987-11-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78353]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	YAMASHITA SHIGEO,KAJIMURA TAKASHI,HIRASHIMA KENJI,et al. Semiconductor laser element. JP1989140787A. 1989-06-01.

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