| Semiconductor laser | |
| NANZAKI HIRONORI | |
| 1988-12-13 | |
| 著作权人 | TOSHIBA CORP |
| 专利号 | JP1988305579A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To upgrade working efficiency, by using a diffraction grating as a means for constant beam output control of laser power. CONSTITUTION:On one side of a wall part 11b which stands perpendicularly to an upper flat plate part 11a of a stem 11 for sealing a package, a semiconductor laser diode element 103 and a monitoring photodiode element 12 are die- bonded with respective electrodes on one side and they are guided by a lead 1023, and respective electrodes on the other side are guided by leads 1021 and 1022. Further on the upper flat plate part 11a of the stem 11, a reflection type diffraction grating 13 is disposed on the extension of the emission plane of the laser diode element 103, so that the emission beams of the laser diode element are partially diffracted to be monitored. Hence, die-bonding of both the diode elements 103 and 12 is performed in the same direction, and so working efficiency can be upgraded. |
| 公开日期 | 1988-12-13 |
| 申请日期 | 1987-06-05 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/78160]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | NANZAKI HIRONORI. Semiconductor laser. JP1988305579A. 1988-12-13. |
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