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	Semiconductor laser device
	NAGAI YUTAKA
	1989-05-29
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989136393A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain an SBA laser, the shape of laser beams of which in the horizontal direction takes a single peak and is smoothed with respect to a substrate, by forming a p-type GaAs laser-beam absorption layer at the same position as an active region in the horizontal direction on an n-type GaAs current block layer. CONSTITUTION:A p-type GaAs laser-beam absorption layer 4 is shaped onto an n-type GaAs current block layer, and the laser-beam absorption layer 4 is formed in approximately the same surface as an active region 12 in the horizontal direction. On p-type GaAs, an absorption coefficient larger than n-type GaAs is acquired within a range of photon energy of 4-6eV (780-890nm in a laser beam wavelength) in carrier concentration of 2X10cm. The absorption coefficient remarkably larger than n-type GaAs is obtained particularly within a range of 42-50eV (830-870nm in the laser beam wavelength). The laser-beam absorption layer 4 composed of p-type GaAs is shaped anew to an SBA laser, thus sufficiently absorbing laser beams, then forming the shape of laser beams to a single peak shape in the horizontal direction and smoothing it.
公开日期	1989-05-29
申请日期	1987-11-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78142]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	NAGAI YUTAKA. Semiconductor laser device. JP1989136393A. 1989-05-29.

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