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	Semiconductor laser device
	YAMASHITA, SHIGEO; MATSUDA, HIROSHI; KOBAYASHI, UICHIRO; KOBAYASHI, MASAYOSHI; NAKASHIMA, HISAO
	1982-01-27
著作权人	HITACHI, LTD.
专利号	EP0044571A2
国家	欧洲专利局
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	This invention consists in improvements in a buried-heterostructure laser with buried optical guide, and facilitates the oscillation of the laser in the fundamental mode thereof and also enhances the available percentage of production of the laser. An active layer (3) and an optical guide layer (2) are sandwiched between two cladding layers (1, 4), to form an optical confinement region. The width of the semiconductor material assembly varies in the stacking direction of the layers (1 . 4), and the narrowest part (14) thereof is located on the side opposite to the optical guide layer (2) with reference to the position of the active layer (3). The side surface of said semiconductor material assembly parallel to the travelling direction of laser radiation is buried by a burying layer (6).
公开日期	1982-01-27
申请日期	1981-07-23
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78115]
专题	半导体激光器专利数据库
作者单位	HITACHI, LTD.
推荐引用方式 GB/T 7714	YAMASHITA, SHIGEO,MATSUDA, HIROSHI,KOBAYASHI, UICHIRO,et al. Semiconductor laser device. EP0044571A2. 1982-01-27.

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