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	Optical semiconductor device
	AOYAGI, TOSHITAKA; MIYAZAKI, YASUNORI
	1998-08-04
著作权人	MITSUBISHI DENKI KABUSHIKI KAISHA
专利号	US5790737
国家	美国
文献子类	授权发明
其他题名	Optical semiconductor device
英文摘要	A semiconductor laser chip according to the present invention comprises: a p-type InP substrate; an InGaAsP active layer (optical waveguide) formed on said substrate; a p-n-p InP block layer formed on said substrate; a contact layer formed thereupon; an insulating film formed on said contact layer; a front surface electrode formed on said insulating film; a pair of alignment marks formed at the same time of the optical waveguide; and a back surface electrode formed on said substrate. The alignment marks are formed from the same material, i.e., the same crystal as said optical waveguide. Accordingly, it is possible to improve precision of the relative position between said optical waveguide and said alignment marks.
公开日期	1998-08-04
申请日期	1996-08-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/78081]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	AOYAGI, TOSHITAKA,MIYAZAKI, YASUNORI. Optical semiconductor device. US5790737. 1998-08-04.

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