QQ客服 官方微博 反馈留言

	Manufacture of semiconductor device
	KITAMURA MITSUHIRO
	1988-10-05
著作权人	NEC CORP
专利号	JP1988240089A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor device
英文摘要	PURPOSE:To inhibit the precipitation of a polycrystal onto an insulating film by elevating the temperature of formation of the insulating film for selective growth to 180 deg.C or more when a high-resistance semiconductor layer is vapor-grown. CONSTITUTION:In the manufacture of a semiconductor device in which a semiconductor layer is epitaxial-grown selectively by using an insulating film 5 through vapor growth, the insulating film 5 is formed at a temperature of 180 deg.C or more. That is, the degree of the precipitation of a polycrystal 9 onto the insulating film 5 largely depends upon the method of the formation of the insulating film 5. When an SiNx film is shaped through a plasma CVD method and the film is used as a mask for selective growth, a temperature of approximately 180 deg.C is employed as a boundary, and the precipitation of the polycrystal 9 is increased at a temperature lower than the temperature, but precipitation is reduced comparatively at a temperature higher than that, and the polycrystal can be removed sufficiently after growth. Accordingly, the deterioration of yield on manufacture due to the insufficient removal of the polycrystal 9 at the time when a high-resistance layer 8 is grown is prevented. The method can also be applied to the manufacture of an LED, a photo-detector and an integrated device.
公开日期	1988-10-05
申请日期	1987-03-27
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77999]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO. Manufacture of semiconductor device. JP1988240089A. 1988-10-05.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。