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	Multibeam semiconductor laser device
	TAKAMURA TAKASHI
	1990-10-18
著作权人	SEIKO EPSON CORP
专利号	JP1990257689A
国家	日本
文献子类	发明申请
其他题名	Multibeam semiconductor laser device
英文摘要	PURPOSE:To reduce crosstalks among elements sufficiently, and to improve reliability by forming a sub-mount of a Cu-W sintered alloy, etc., coated with an insulator and mounting conductive material wirings in number corresponding to the number of laser beams onto the sub-mount. CONSTITUTION:An Al2O3 insulating film 102 is shaped onto a Cu-W sintered alloy substrate (a sub-mount) 101 through an electron-beam evaporation method, gold is vacuum-deposited and leading-out electrodes (conductive material wirings) 103 are formed through a photolithographic process. A multibeam semiconductor laser element 104 is die-bonded while indium is used as a wax material, and lastly the conductive material wirings 103 and the common electrode 106 of a multibeam semiconductor laser element are wire-bonded, thus shaping a multibeam semiconductor laser device. The conductive material wirings 103 in number corresponding to the number of laser beams are formed onto the sub-mount 101 particularly at that time. Accordingly, thermal crosstalks are difficult to be generated, thus extremely facilitating the design of a driver circuit, etc.
公开日期	1990-10-18
申请日期	1989-03-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77475]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	TAKAMURA TAKASHI. Multibeam semiconductor laser device. JP1990257689A. 1990-10-18.

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