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	Semiconductor laser element
	TAKIGUCHI HARUHISA; KANEIWA SHINJI; KUDO HIROAKI; YOSHIDA TOMOHIKO
	1988-01-26
著作权人	SHARP CORP
专利号	JP1988018686A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To obtain the specified value of an oscillated wavelength, by specifying the mixed crystal ratio of the mixed crystals of an active laser, a clad layer and a light guide layer in a semiconductor laser element in a predetermined rage, thereby guiding light into a guide layer, and performing sufficient feedback by a diffraction grating. CONSTITUTION:An N-clad layer 12, an active layer 13, a light guide layer 14, an intermediate layer 15 and a P-clad layer 16 are formed on a substrate 11 of a semiconductor laser element. A layer, on which a diffraction grating comprising In1-uGavP1-vAs (v = 2.04u-04) is formed, is attached in the vicinity of the layer 13. At a position of the layer, on which the diffraction grating is formed, on the opposite side with respect to the layer 13, a Ga1-wAlwAs layer or an In1-kGakP1-lAsl layer having the composition of nal>n>nG, where (n) is a refractive index, nal is the refractive index of the layer 13, and nG is the refractive index of the layer, on which the diffraction grating is formed, is inserted. Light is guided to the guide layer 14. Sufficient feedback is performed by the diffraction grating. Thue the oscillating frequency is made to be a specified value.
公开日期	1988-01-26
申请日期	1986-07-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/77383]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	TAKIGUCHI HARUHISA,KANEIWA SHINJI,KUDO HIROAKI,et al. Semiconductor laser element. JP1988018686A. 1988-01-26.

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