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	Manufacture of optical integrated circuit
	SAKANO SHINJI; NAKAMURA HITOSHI; MOROSAWA KENICHI; KAYANE NAOKI
	1989-03-10
著作权人	HITACHI LTD
专利号	JP1989064386A
国家	日本
文献子类	发明申请
其他题名	Manufacture of optical integrated circuit
英文摘要	PURPOSE:To obtain a flat face without a stepped part on the surface by a method wherein a first light waveguide in a first light waveguide region is left and both sides of a second light waveguide region are left so that this region can be made recessed. CONSTITUTION:An InGaAs P layer 3-1 and a p-type InP layer 3-2 are crystal-grown on an n-type InP substrate 1; after that, these layers are processed in such a way that a protruding shape 3 is left in a first light waveguide region and that protruding shapes 5 of a multilayer film for laser use are left on both sides of a second light waveguide region 2. Then, a multilayer growth operation of a second crystal layer 4 for photodetector use is executed. An InGaAsP layer is not grown on the protruding parts on both sides in a laser part and a region for a photodetector use by means of liquid growth; inversely, the layer is grown very rapidly in a recessed part. If a crystal growth operation is executed in such a way that an upper face of a p-type InP layer as a second layer by a second crystal growth operation after the operation becomes higher than the protruding shape, a height of the protruding part becomes nearly the same as that of the recessed region and both are flattened. In this state, the surface is flat; a depth from the laser part to the InGaAsP layer is equal to that from a photodetector part to the InGaAsP layer.
公开日期	1989-03-10
申请日期	1987-09-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76869]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	SAKANO SHINJI,NAKAMURA HITOSHI,MOROSAWA KENICHI,et al. Manufacture of optical integrated circuit. JP1989064386A. 1989-03-10.

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