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	Liquid phase epitaxial growth method
	KAWANO HIDEO
	1983-11-05
著作权人	NIPPON ELECTRIC CO
专利号	JP1983190021A
国家	日本
文献子类	发明申请
其他题名	Liquid phase epitaxial growth method
英文摘要	PURPOSE:To provide an epitaxial layer of high quality having uniform composition and layer thickness with little defect, by a method wherein a substrate crystal with {111} A surface exposed is used in edge growth producing portion. CONSTITUTION:A substrate crystal 11 is provided on both end surface sides at distance of about 2-3mm. with a slant surface having {111} In surface so-called {111} A surface 12. The {111} A surface 12 may be easily formed by using SiO2 film as a selective etching mask and etching only surface of the substrate crystal 11 by Br2-methanol mixing liquid for 2-3min. Multi-layer liquid phase epitaxial growth can be performed by arranging the InP substrate crystal 11 using a growing board so that the slant surface of the {111} A surface 12 is at front or rear side of the moving direction of the substrate crystal 11 and then performing the growth operation. The hetero epitaxial layer is formed in whole region of wafer in good uniformity of an n type InP layer 13 being about 2mum thick, an n type In1-xGaxAsyP1-y active layer 1 being about 2mum thick and a p type InP layer 15 being about 2mum thick.
公开日期	1983-11-05
申请日期	1982-04-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76804]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	KAWANO HIDEO. Liquid phase epitaxial growth method. JP1983190021A. 1983-11-05.

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