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	Semiconductor laser device
	ONO YUICHI; NAKATSUKA SHINICHI; KAJIMURA TAKASHI; KAYANE NAOKI
	1986-05-19
著作权人	HITACHI LTD
专利号	JP1986101089A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To facilitate the start of self-oscillation by a method wherein a device is so structured that the electric current distributed by a P electrode may flow only within a adequately narrow 1-3mum-wide stripe and the thickness of an activation layer and of a P-clad layer just over the activation layer are so selected as to optimize the distribution of refractivity and gain. CONSTITUTION:On a semiconductor crystal 11, a clad layer 12, activation layer 13, clad layer 14, current-constricting layer 15 are formed in that order by the MOCVD method. A stripe-geometry groove is provided in the layer 15, and only the stripe only, with its width W0 approximately 1-3mum, is subjected to selective etching. The photoresist is removed before a clad layer 16, cap layer 17 are formed. A narrow-stripe structure is approached along the direction where the thickness d1 of the layer 13 and the thickness d2 of the layer 14 increase, which results in a multi-mode type of oscillation and, along the direc tion where they decrease, there realizes a single-mode type of oscillation. It follows therefore that self-oscillation is started under the conditions satisfying 0.04mum
公开日期	1986-05-19
申请日期	1984-10-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76465]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	ONO YUICHI,NAKATSUKA SHINICHI,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1986101089A. 1986-05-19.

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