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	Liquid phase growth apparatus
	KUSUKI TOSHIHIRO
	1985-01-31
著作权人	FUJITSU KK
专利号	JP1985018914A
国家	日本
文献子类	发明申请
其他题名	Liquid phase growth apparatus
英文摘要	PURPOSE:To make satisfactory epitaxial crystal growth by a method wherein grooves are formed in a solution holding block along the direction perpendicular to the sliding direction and are laid along the surface of a substrate holding block and the grooves have contact with the atmosphere at the position lower than the upper surface of the surbstrate holding block. CONSTITUTION:A substrate holding part 12 is formed in a substrate holding block 11 and a GaAs substrate 13 is placed in the substate holding part 12. Solution sinks 15, 16 and phosphorous vapor discharging grooves 19, 20 are provided to a solution holding block (slider) 14 to compose a liquid phase growth boat. A prescribed melt 17 is put into the solution sink 15 and a prescribed melt 18 is put into the solution sump 16. The growth boat is put into a hydrogen atmosphere and, after being maintained at the prescribed temperature for a prescribed period, cooled down to the prescribed temperature and the block 14 is slid. The melt 17 and the melt 18 are held on the substrate 13 in order. Phosphorous vapor from the melt 17 is discharged into the atmosphere through an open end of the groove 19 so that the substrate 13 is prevented from contamination caused by the phosphorous vapor and satisfactory epitaxial crystal is made grow.
公开日期	1985-01-31
申请日期	1983-07-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/76263]
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	KUSUKI TOSHIHIRO. Liquid phase growth apparatus. JP1985018914A. 1985-01-31.

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