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	Manufacture of semiconductor laser
	ONO KENICHI; YAMASHITA KOJI
	1992-03-31
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1992099390A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To improve enclosure of light or carrier by a clad layer without regrown boundary near an active layer by irradiating an interference light used for a double luminous flux interference exposure method through a stripelike mask in an MOCVD unit, and growing an active layer of a thin film rectangular prism shape in a diffraction grating shape. CONSTITUTION:A lower clad layer 3 is grown on a board Then, after an active layer growing mask 12 is conveyed on a wafer to be approached, an interference light used for a double luminous flux interference exposure method is irradiated from a window formed at the upper part of a reaction tube of an MOCVD unit through a mask 12 to form a second active layer 13 of a rectangular prism shape having the diffraction grating shape. Then, the mask 12 is removed, an upper clad layer 7 is formed, a cap layer 8 is formed on the layer 7, and electrodes 9, 10 are eventually formed on the upper and lower ends to complete a semiconductor laser structure.
公开日期	1992-03-31
申请日期	1990-08-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74951]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	ONO KENICHI,YAMASHITA KOJI. Manufacture of semiconductor laser. JP1992099390A. 1992-03-31.

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