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	Distributed feedback semiconductor laser
	SUZUKI YASUHIRO; IWAMURA HIDETOSHI; MIKAMI OSAMU
	1990-10-05
著作权人	日本電信電話株式会社
专利号	JP1990249287A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback semiconductor laser
英文摘要	PURPOSE:To facilitate manufacture of a distributed feedback semiconductor laser which requires no wave guide layer besides an active layer and required no regrowth after manufacture of a grating by periodically mixing crystals in a superlattice clad to modulate the refractive index and forming the grating. CONSTITUTION:A clad layer 1, an active layer 2, a p-GaAs/AlAs superlattice clad layer 7, and a cap layer 8 are grown in that order on a substrate 6 and an SiO2 film 10 is formed on the upper face of said cap layer 8. A periodic line-space pattern is made by patterning the SiO2 film 10 by the reactive ion etching(RIE) method, another GaAs wafer 6 is laminated on the patterned SiO2 film 10, and heat treatment is performed. Thereby crystals are mixed in the superlattice under the SiO2 film, the refractive index is changed, and a grating 9 is formed by modulation of the refractive index.
公开日期	1990-10-05
申请日期	1988-12-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74845]
专题	半导体激光器专利数据库
作者单位	日本電信電話株式会社
推荐引用方式 GB/T 7714	SUZUKI YASUHIRO,IWAMURA HIDETOSHI,MIKAMI OSAMU. Distributed feedback semiconductor laser. JP1990249287A. 1990-10-05.

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