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	Semiconductor light emitting element
	HAMADA HIROYOSHI
	1983-12-21
著作权人	SANYO DENKI KK
专利号	JP1983219790A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting element
英文摘要	PURPOSE:To improve ohmic characteristics, by laminating a plurality of cap layers on a light emitting layer so that carrier concentrations become sequentially large from the side of the light emitting layer. CONSTITUTION:On a substrate 1, a first clad layer 3, an active layer 4, and a second clad layer 5 are epitaxially grown sequentially, and a light emitting layer 2 is formed. Then, a cap layer 6, comprising first, second, and third layers 7, 8, and 9 having different concentrations, is formed. The carrier concentrations of the first - third layers 7-9 become sequentially large. In this constitution, a dopant material in the cap layer 6 is not diffused into the light emittng layer 2. Therefore, the light emitting layer 2 having the desired carrier concentration can be obtained, and the carrier concentration of the cap layer 6 can be made high. Thus the ohmic characteristics can be improved.
公开日期	1983-12-21
申请日期	1982-06-14
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74762]
专题	半导体激光器专利数据库
作者单位	SANYO DENKI KK
推荐引用方式 GB/T 7714	HAMADA HIROYOSHI. Semiconductor light emitting element. JP1983219790A. 1983-12-21.

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