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	Semiconductor laser
	SATO FUMIHIKO; IMANAKA KOICHI
	1988-09-13
著作权人	OMRON TATEISI ELECTRONICS CO
专利号	JP1988220588A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To simplify a production process and to achieve the high yield rate by a method wherein a low part on both sides of a mesa-shaped active region is buried with a heat-resisting and high-resistance resin whose coefficient of thermal expansion is very close to that of the active region. CONSTITUTION:A heat-resisting and high-resistance resin is placed at a low part on both sides of a mesa part in such a way that its height is almost equal to the surface of the mesa part; an electrode is formed on the surface of the mesa part and on the surface of the heat-resisting and high-resistance resin. This heat-resisting and high-resistance resin is transformed into a low-thermal- expansion resin whose coefficient of thermal expansion is almost the same as that of a semiconductor material constituting a semiconductor laser. Accrodinglly, the crystal growth can be executed by only one crystal growth process of a double heterojunction. By this setup, a production process is simplified; in addition, because the coefficient of thermal expansion of the heat- resisting and high-resistance resin is close to that of the semiconductor, the breakdown strength of the junction at an active region is not deteriorated, it is possible to achieve the high yield rate.
公开日期	1988-09-13
申请日期	1987-03-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74556]
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRONICS CO
推荐引用方式 GB/T 7714	SATO FUMIHIKO,IMANAKA KOICHI. Semiconductor laser. JP1988220588A. 1988-09-13.

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