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	Semiconductor laser
	KITAMURA MITSUHIRO
	1985-08-01
著作权人	NIPPON DENKI KK
专利号	JP1985145684A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To obtain the titled device of phase synchronization type capable of providing large outputs and having large improvements in reproducibility of element characteristics and in manufacturing yield by a method wherein a plurality of BH-LD's of effective current confinement are arranged in a transverse direction, and an optical quide layer lying over the active region is formed under an active layer. CONSTITUTION:An N-In0.78Ga0.22As0.48P0.52 optical guide layer 2, a non-doped In0.72Gao.28As0.61P0.39 active layer 3, and a P-InP clad layer 4 are successively laminated on the N-InP substrate Mesa stripes 5 parallel in the direction and etching grooves 6 and 7 are formed by selectively etching such a semiconductor wafer of double heteto structure (DH). Excluding only the upper surfaces of the mesa stripes 5, P-InP current block layers 8 and N-InP current block layers 9, further a P-InP buried layer 10 and a P-In0.78Ga0.22As0.48P0.52 electrode layer 11 and laminated over the DH wafer etched in such a manner. A P type ohmic electrode 12 and an N type ohmic electrode 13 are formed to an element subjected to crystal growth as above, which element is then cut into a suitable resonator length; accordingly, a desired phase synchronization type BH-LD is obtained.
公开日期	1985-08-01
申请日期	1984-01-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74229]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO. Semiconductor laser. JP1985145684A. 1985-08-01.

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