QQ客服 官方微博 反馈留言

	Semiconductor laser
	-
	1977-01-13
著作权人	MATSUSHITA ELECTRONICS CORP
专利号	GB1461199A
国家	英国
文献子类	授权发明
其他题名	Semiconductor laser
英文摘要	1461199 Semi-conductor lasers MATSUSHITA ELECTRONICS CORP 15 March 1974 [20 March 1973 (2)] 11722/74 Headings H1C and H1K [Also in Division C4] In a double heterostructure semi-conductor laser the carrier concentration in its active layer 13, with reference to the thickness of this layer, has a maximum at the centre of the layer and parts of the active layer away from the centre have progressively lower carrier concentrations. The carrier concentration change may be of a step-wise character, Fig. 5 (not shown) or may be continuous, Fig. 7c (not shown). In the embodiment of Fig. 3, which is made by the epitaxial growth of layers 12, 13, 14 and 15 on a substrate 11, the active layer 13 is grown as a series of seven layers. In layers two to four, the concentration of Zn dopant in each layer is greater than in the previous layer, to reach a maximum dopant concentration in layer four. From layers four to seven this effect is reversed, to give a symmetrical step-like distribution of carrier concentration. In the embodiment of Fig. 6 the active layer 113 initially comprises three layers 41-43, 42 being Zn-doped GaAs while 41 and 43 are non-doped GaAs. After production by epitaxial growth of the entire element 111-115, it is heat-treated, causing the Zn dopant of layer 42 to diffuse outwards and produce a symmetrical bell-shaped distribution of carrier concentration (Fig. 7c).
公开日期	1977-01-13
申请日期	1974-03-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/74111]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRONICS CORP
推荐引用方式 GB/T 7714	-. Semiconductor laser. GB1461199A. 1977-01-13.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。