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	Semiconductor laser array device
	MATSUI KANEKI; TANETANI MOTOTAKA; MATSUMOTO AKIHIRO
	1986-05-13
著作权人	SHARP CORP
专利号	JP1986094387A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser array device
英文摘要	PURPOSE:To oscillate each laser beam synchronously at a zero phase by alternately arranging regions having different carrier concentration to an active layer and forming a plurality of fundamental attitude index waveguides whose effective refractive indices are changed. CONSTITUTION:M-Ga0.6Al0.4As 32, a P-Ga0.95Al0.05As active layer (Mg, 1X10cm) 33, P-Ga0.6Al0.4As 34 and P-GaAs 35 are superposed on N-GaAs 31, an Si3N4 film 38 for constricting currents to which current injection ports are bored is formed, and a P side electrode 37 and an N side electrode 36 are attached. Zn is diffused while slightly crossing a junction surface between the active layer 33 and the clad layer 32 from the cap layer 35, regions 39 having carrier concentration of approximately 1X10cm in the active layer are shaped at regular intervals, and the distribution of refractive indices is formed. According to the constitution, the layer thickness of several laser element is equalized and oscillating thresholds are made uniform, and a phase lock is started from the oscillating thresholds. Optical loss in an intermediate region between lasers is eliminated, and an inversion at 180 deg. of a field phase is prevented by the increase of gains, and far field patterns in the direction parallel with the junction are brought to approximately a single peak.
公开日期	1986-05-13
申请日期	1984-10-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73955]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	MATSUI KANEKI,TANETANI MOTOTAKA,MATSUMOTO AKIHIRO. Semiconductor laser array device. JP1986094387A. 1986-05-13.

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