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	Semiconductor light emitting device
	TABUCHI HARUHIKO
	1992-09-24
著作权人	FUJITSU LTD
专利号	JP1992268780A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	PURPOSE:To enable the oscillation light rays of a semiconductor light emitting device to be lessened in spectral line width by a method wherein an active layer is of a quantum well structure, and a wavelength selection means selects wavelengths correspondent to the second quantum level energy of the quantum well. CONSTITUTION:A prescribed bias is applied to a P-side electrode 15 and an N-side electrode 16, and a current is injected into a QW active layer 13 to oscillate laser rays. At this point, electrons distributed at a first quantum level energy E1 are recombined with holes to emit light rays, and when a current exceeds a threshold current Ith, laser rays start to oscillate. In succession, an AR coat 17 is provided to the end face to prevent reflection, and when an injection current I is made to increase, carriers start to assemble at a second quantum level energy E2. When carriers distributed at an energy E2 start to recombine, a differential gain becomes large and a refractive index change attendant on that of carrier density becomes small. Therefore, in this state, an alpha parameter becomes small at a second quantum level energy E2.
公开日期	1992-09-24
申请日期	1991-02-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/73767]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	TABUCHI HARUHIKO. Semiconductor light emitting device. JP1992268780A. 1992-09-24.

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