Semiconductor laser module
MUGINO, AKIRA; SHIMIZU, TAKEO
2002
著作权人THE FURUKAWA ELCTRIC CO., LTD
专利号US6335944
国家美国
文献子类授权发明
其他题名Semiconductor laser module
英文摘要A semiconductor laser module of an external-cavity type in which a GaAs/AlGaAs-based semiconductor laser having ripples in the gain-wavelength characteristic thereof and an optical transmission medium including a Bragg grating are optically coupled by an optical coupling member. A gain peak wavelength (lambd(Ith)) for the case where the modularized semiconductor laser is driven with a threshold current (Ith) is set on the shorter-wavelength side of the reflection center wavelength (lambdBG) of the Bragg grating, a gain peak wavelength (lambd(Iop)) of the semiconductor laser for a maximum operating current (Iop) is set on the longer-wavelength side of the gain peak wavelength (lambd(Ith)), a pulling wavelength width (lambdPULL) and a de-tuning width (lambddetun) of the semiconductor laser module are set so that the de-tuning width (lambddetun) is smaller than the pulling wavelength width (lambdPULL), the resulting difference (=lambdPULL-lambddetun) is greater than the full width at half maximum of the reflection spectrum of the Bragg grating, and the gain peak wavelength (lambd(Ith)) is on the longer-wavelength side of a limit value (lambdLIMIT).
公开日期2002
申请日期2000-09-27
状态授权
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/71568]  
专题半导体激光器专利数据库
作者单位THE FURUKAWA ELCTRIC CO., LTD
推荐引用方式
GB/T 7714
MUGINO, AKIRA,SHIMIZU, TAKEO. Semiconductor laser module. US6335944. 2002-01-01.
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