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	Semiconductor laser device
	WATABE NOBUTAKA
	1990-05-18
著作权人	日本電気株式会社
专利号	JP1990130987A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To improve the small signal frequency characteristics for reducing notches by a method wherein a laser loading block is held by members made of a material in low thermal conductivity and high dielectric constant. CONSTITUTION:The laser loading block holding members 10 are structured into one body with an airtight package 7 by brazing a metallic sheet upon the surface of a material in low thermal conductivity and high dielectric constant and further metallizing the rear surface of the members 10 to be brazed upon the bottom surface of the package 7. Then, the bottom surface of a laser loading block 5 loaded with a semiconductor laser element 1, a temperature measuring thermistor 2 and a coupling lens 3 with an optical fiber 6 is closely adhered to the surface of the members 10 to be weld-fixed thereon. Through these procedures, the capacity of the members 10 is added to the parasitic capacity of electronic cooling elements 13 to reduce the impedance in case of the parallel resonance. Consequently, the notches of the small frequency characteristics can be reduced.
公开日期	1990-05-18
申请日期	1988-11-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70886]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	WATABE NOBUTAKA. Semiconductor laser device. JP1990130987A. 1990-05-18.

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