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	Light emitting device
	HAN, DAE SEOB; MOON, YONG TAE; SHIM, JONG-IN
	2016-12-21
著作权人	LG INNOTEK CO., LTD.
专利号	EP2535952A3
国家	欧洲专利局
文献子类	发明申请
其他题名	Light emitting device
英文摘要	Disclosed is a light emitting device including a first conductive type semiconductor layer; a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer; and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the active layer comprising quantum well layers and quantum barrier layers, wherein each of the quantum well barrier layers comprises first barrier layers and a second barrier layer disposed between the first barrier layers, and an energy bandgaps of the second barrier layer is larger than energy bandgaps of the quantum well layers and smaller than energy bandgaps of the first barrier layers.
公开日期	2016-12-21
申请日期	2012-02-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/70126]
专题	半导体激光器专利数据库
作者单位	LG INNOTEK CO., LTD.
推荐引用方式 GB/T 7714	HAN, DAE SEOB,MOON, YONG TAE,SHIM, JONG-IN. Light emitting device. EP2535952A3. 2016-12-21.

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