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	Two-beam semiconductor laser device
	KARAKI MORIHIRO; SATO YASUYUKI
	1989-06-08
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1989146142A
国家	日本
文献子类	发明申请
其他题名	Two-beam semiconductor laser device
英文摘要	PURPOSE:To separatedly monitor each output intensity and to relax the arrangement precision of each element by using a face light emission type semiconductor laser in either of semiconductor laser arrays. CONSTITUTION:One array of a two-beam semiconductor laser 34 consists of the face light emission type semiconductor laser, and a first light intensity monitor photodetector 35 is arranged to face the surface of the two-beam semiconductor laser 34 and a second light intensity monitor photodetector 36 is arranged at right angles to this surface. The light intensity of one light beam 2 is monitored by light 42 emitted in the direction perpendicular to forward emitted light 2 and 3, and backward emitted light 43 is used to monitor the light intensity of the other light beam 3. Thus, light intensities of the reproducing light beam 2 and the recording light beam 3 are monitored and are controlled, and the adjustment of light intensity monitor photodetectors 35 and 36 is facilitated.
公开日期	1989-06-08
申请日期	1987-12-02
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/68956]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KARAKI MORIHIRO,SATO YASUYUKI. Two-beam semiconductor laser device. JP1989146142A. 1989-06-08.

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