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	Semiconductor laser and method for producing the same
	NAKAMURA, RYO; WATANABE, YASUHIRO; TOMITA, KAZUYOSHI
	2005-10-06
著作权人	TOYODA GOSEI CO., LTD.
专利号	US20050220157A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser and method for producing the same
英文摘要	Because height H and height h are sufficiently large as shown in FIG. 2, a semiconductor layer formed above the convex part through crystal growth always has thickness smaller than a semiconductor layer formed at the central part of the cavity (concave part existing between two convex parts). That tends to occur until at least the active layer 106 is completed. As a result, a window structure, which has band gap energy sufficiently larger than the central portion of the cavity owing to its quantum size effect, can be obtained around the output facet of the cavity. Also, an n-type clad layer 104 is formed between the etching plane having etching damage and the semiconductor layer constructing a waveguide. That enables to relax or overcome negative effect which is caused by damage left on the etching plane toward crystallinity of the waveguide.
公开日期	2005-10-06
申请日期	2005-03-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67768]
专题	半导体激光器专利数据库
作者单位	TOYODA GOSEI CO., LTD.
推荐引用方式 GB/T 7714	NAKAMURA, RYO,WATANABE, YASUHIRO,TOMITA, KAZUYOSHI. Semiconductor laser and method for producing the same. US20050220157A1. 2005-10-06.

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