QQ客服 官方微博 反馈留言

	Manufacture of buried heterosemiconductor laser
	KUNIHARA KENJI
	1988-09-16
著作权人	FUJI ELECTRIC CO LTD
专利号	JP1988222486A
国家	日本
文献子类	发明申请
其他题名	Manufacture of buried heterosemiconductor laser
英文摘要	PURPOSE:To reduce an amount of side etching at the time of etching, by removing an active layer and a thin second clad layer grown in the first grow process by etching followed by forming the active layer in a buried manner in a photoetching process. CONSTITUTION:A first clad layer C1, an active layer A and a second clad layer C2 having smaller thickness than that of the first clad layer C1 are formed by turns on a substrate S. Next, photoetching is performed while leaving a mesa including a stripe-shaped active layer of fixed width until the first clad layer C1 is reached. Further, the third clad layer C3 is selectively grown in the region removed by photoetching until reaching the top surface of the second clad layer C2 of the said mesa for burying the active layer A in the clad layer. Finally, the fourth clad layer C4 and a contact layer Ep are formed on these layers. In this way, depth of etching necessary for forming the mesa is reduced to 1/10 compared with existing ones so as to be able to suppress the amount of side etching at the time of etching to a small amount.
公开日期	1988-09-16
申请日期	1987-03-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67695]
专题	半导体激光器专利数据库
作者单位	FUJI ELECTRIC CO LTD
推荐引用方式 GB/T 7714	KUNIHARA KENJI. Manufacture of buried heterosemiconductor laser. JP1988222486A. 1988-09-16.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。