QQ客服 官方微博 反馈留言

	Semiconductor optical modulation element
	SUZUKI MASATOSHI; AKIBA SHIGEYUKI; UKO KATSUYUKI; TANAKA HIDEAKI
	1989-01-09
著作权人	KOKUSAI DENSHIN DENWA CO LTD
专利号	JP1989004088A
国家	日本
文献子类	发明申请
其他题名	Semiconductor optical modulation element
英文摘要	PURPOSE:To obtain an optical modulation element which allows for a low- voltage modulation and a high-speed modulation, by forming the optical waveguide layer from a semi-insulating layer, and constructing the upper and lower clad layers from semiconductors of the same conductivity, thereby reducing the waveguide loss. CONSTITUTION:On a p-InP substrate 11, an optical waveguide layer 10 is formed of an semi-insulation InGaAsP layer. Also, an upper InP clad layer 4 is of a p-type electrical conductivity same as the substrate 11 which is a lower InP clad layer. In this optical modulation element, since the clad layers 4 and 11 have the same conductivity, the electric field is formed only in the hetero interface. Accordingly, an incident light is outputted with substantially no damage, and the increase of the absorption loss provided by the electric field does not occur. Almost all the voltage applied to the optical modulation element is applied to the semi-insulating layer, so a high extinction ratio is obtained at a low voltage. Also, a fast operation is permitted, and a wideband optical modulation element can be formed.
公开日期	1989-01-09
申请日期	1987-06-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/67630]
专题	半导体激光器专利数据库
作者单位	KOKUSAI DENSHIN DENWA CO LTD
推荐引用方式 GB/T 7714	SUZUKI MASATOSHI,AKIBA SHIGEYUKI,UKO KATSUYUKI,et al. Semiconductor optical modulation element. JP1989004088A. 1989-01-09.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。